Compact Modeling of the MOSFET in VHDL-AMS

Christophe Lallement, christophe.lallement@ensps.u-strasbg.fr [1]
François Pêcheux, francois.pecheux@lip6.fr [2]
Alain Vachoux, alain.vachoux@epfl.ch [3]
and Fabien Prégaldiny, fabien.pregaldiny@iness.cstrasbourg.fr [1]
[1] InESS (UMR 7163)/ ENSPS, Parc d’innovation, BP 10413, F-67412 Illkirch Cedex, France
[2] LIP6 Integrated Systems Architecture Department, Université Pierre et Marie Curie, 12, rue Cuvier, 75252 Paris Cedex 05, France
[3] LSM Microelectronic Systems Laboratory, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
Last update on February 10, 2006
This page contains the VHDL-AMS models that are discussed in the Chapter 9 of the book "Transistor Level Modeling for Analog/RF IC Design", published by Springer. Go here to get more details about the book.
If you have any question or comment about the models, please contact any author above.

Abstract

In this chapter, we present the capabilities of the VHDL-AMS hardware description language for developing compact models. After a brief description of the VHDL-AMS language, we present two meaningful case studies on design oriented models of MOSFET.
The first study focuses on the EKV v2.6 MOSFET model and takes into account the thermo-electrical interaction and the extrinsic aspects. The EKV v2.6 model uses linearization with respect to surface potential, resulting in physically well-based expressions for the whole model.
The second study is a simplified version of the MM11 Philips model that takes into account the quantum mechanical effects. MM11 is a compact MOSFET model based on the formulation of the surface potential.

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